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Atomic layer epitaxy of GaAs with a 2 μm/h growth rate
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10.1063/1.109370
/content/aip/journal/apl/62/19/10.1063/1.109370
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/19/10.1063/1.109370
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/content/aip/journal/apl/62/19/10.1063/1.109370
1993-05-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic layer epitaxy of GaAs with a 2 μm/h growth rate
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/19/10.1063/1.109370
10.1063/1.109370
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