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Hall effect measurements on boron‐doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition
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10.1063/1.109414
/content/aip/journal/apl/62/19/10.1063/1.109414
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/19/10.1063/1.109414
/content/aip/journal/apl/62/19/10.1063/1.109414
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/content/aip/journal/apl/62/19/10.1063/1.109414
1993-05-10
2014-07-13
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hall effect measurements on boron‐doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/19/10.1063/1.109414
10.1063/1.109414
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