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C54‐TiSi2 formed by direct high current Ti‐ion implantation
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10.1063/1.109417
/content/aip/journal/apl/62/19/10.1063/1.109417
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/19/10.1063/1.109417
/content/aip/journal/apl/62/19/10.1063/1.109417
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/content/aip/journal/apl/62/19/10.1063/1.109417
1993-05-10
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: C54‐TiSi2 formed by direct high current Ti‐ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/19/10.1063/1.109417
10.1063/1.109417
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