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Migration enhanced epitaxy growth of GaAs on Si with (GaAs)1−x (Si2) x GaAs strained layer superlattice buffer layers
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10.1063/1.109355
/content/aip/journal/apl/62/2/10.1063/1.109355
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/2/10.1063/1.109355
/content/aip/journal/apl/62/2/10.1063/1.109355
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/content/aip/journal/apl/62/2/10.1063/1.109355
1993-01-11
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Migration enhanced epitaxy growth of GaAs on Si with (GaAs)1−x (Si2)xGaAs strained layer superlattice buffer layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/2/10.1063/1.109355
10.1063/1.109355
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