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Silicon interstitial absorption during thermal oxidation at 900 °C by extended defects formed via silicon implantation
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10.1063/1.109331
/content/aip/journal/apl/62/20/10.1063/1.109331
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/20/10.1063/1.109331
/content/aip/journal/apl/62/20/10.1063/1.109331
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/content/aip/journal/apl/62/20/10.1063/1.109331
1993-05-17
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon interstitial absorption during thermal oxidation at 900 °C by extended defects formed via silicon implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/20/10.1063/1.109331
10.1063/1.109331
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