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W(Zn) selectively deposited and locally diffused ohmic contacts to p‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition
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10.1063/1.109275
/content/aip/journal/apl/62/21/10.1063/1.109275
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/21/10.1063/1.109275
/content/aip/journal/apl/62/21/10.1063/1.109275
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/content/aip/journal/apl/62/21/10.1063/1.109275
1993-05-24
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: W(Zn) selectively deposited and locally diffused ohmic contacts to p‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/21/10.1063/1.109275
10.1063/1.109275
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