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Electron transport properties of a strained Si layer on a relaxed Si1−x Ge x substrate by Monte Carlo simulation
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10.1063/1.109278
/content/aip/journal/apl/62/21/10.1063/1.109278
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/21/10.1063/1.109278
/content/aip/journal/apl/62/21/10.1063/1.109278
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/content/aip/journal/apl/62/21/10.1063/1.109278
1993-05-24
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/21/10.1063/1.109278
10.1063/1.109278
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