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Implantation temperature dependent distribution of NiSi2 formed by ion beam synthesis in silicon
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10.1063/1.109212
/content/aip/journal/apl/62/22/10.1063/1.109212
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/22/10.1063/1.109212
/content/aip/journal/apl/62/22/10.1063/1.109212
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/content/aip/journal/apl/62/22/10.1063/1.109212
1993-05-31
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Implantation temperature dependent distribution of NiSi2 formed by ion beam synthesis in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/22/10.1063/1.109212
10.1063/1.109212
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