1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low‐pressure metalorganic chemical vapor deposition
Rent:
Rent this article for
USD
10.1063/1.109217
/content/aip/journal/apl/62/22/10.1063/1.109217
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/22/10.1063/1.109217
/content/aip/journal/apl/62/22/10.1063/1.109217
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/62/22/10.1063/1.109217
1993-05-31
2014-10-02
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low‐pressure metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/22/10.1063/1.109217
10.1063/1.109217
SEARCH_EXPAND_ITEM