Reduction of interface‐trap density in metal‐oxide‐semiconductor devices by irradiation
1.T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York, 1989).
2.G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, IEEE Trans. Electron Devices 31, 42 (1984).
3.W. Chen, A. Balasinki, B. Zhang, and T. P. Ma, IEEE Electron Device Lett. 13, 201 (1992).
4.T. P. Ma and M. R. Chin, J. Appl. Phys. 51, 5458 (1980).
5.W. Chen and T. P. Ma, J. Appl. Phys. 70, 860 (1991).
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month