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Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+‐implanted Si(100)
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10.1063/1.109123
/content/aip/journal/apl/62/24/10.1063/1.109123
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/24/10.1063/1.109123
/content/aip/journal/apl/62/24/10.1063/1.109123
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/content/aip/journal/apl/62/24/10.1063/1.109123
1993-06-14
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+‐implanted Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/24/10.1063/1.109123
10.1063/1.109123
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