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Sputter depth profiling analysis of Ta2O5 on Si without preferential sputtering by energetic oxygen ion beams
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10.1063/1.109146
/content/aip/journal/apl/62/24/10.1063/1.109146
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/24/10.1063/1.109146
/content/aip/journal/apl/62/24/10.1063/1.109146
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/content/aip/journal/apl/62/24/10.1063/1.109146
1993-06-14
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sputter depth profiling analysis of Ta2O5 on Si without preferential sputtering by energetic oxygen ion beams
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/24/10.1063/1.109146
10.1063/1.109146
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