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Fast degradation of boron‐doped strained Si(1−x)Ge x layers by 1‐MeV electron irradiation
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10.1063/1.108970
/content/aip/journal/apl/62/3/10.1063/1.108970
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/3/10.1063/1.108970
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/content/aip/journal/apl/62/3/10.1063/1.108970
1993-01-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast degradation of boron‐doped strained Si(1−x)Gex layers by 1‐MeV electron irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/3/10.1063/1.108970
10.1063/1.108970
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