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Homoepitaxial growth of diamond thin films by electron cyclotron‐resonance microwave plasma chemical‐vapor‐deposition apparatus with CO/H2 gaseous source
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10.1063/1.108862
/content/aip/journal/apl/62/6/10.1063/1.108862
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/6/10.1063/1.108862
/content/aip/journal/apl/62/6/10.1063/1.108862
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/content/aip/journal/apl/62/6/10.1063/1.108862
1993-02-08
2015-02-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homoepitaxial growth of diamond thin films by electron cyclotron‐resonance microwave plasma chemical‐vapor‐deposition apparatus with CO/H2 gaseous source
http://aip.metastore.ingenta.com/content/aip/journal/apl/62/6/10.1063/1.108862
10.1063/1.108862
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