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Erratum: ‘‘Enhancement of low‐temperature critical epitaxial thickness of Si(100) with ion beam sputtering’’ [Appl. Phys. Lett. 62, 570 (1993)]
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/content/aip/journal/apl/63/1/10.1063/1.110819
1993-07-05
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: ‘‘Enhancement of low‐temperature critical epitaxial thickness of Si(100) with ion beam sputtering’’ [Appl. Phys. Lett. 62, 570 (1993)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/1/10.1063/1.110819
10.1063/1.110819
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