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Diode‐laser‐pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4‐W average power
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8.In a guided mode with normalized intensity profile f(x) [unit: and ], carriers in the ith QW at experience an intensity proportional to The modal free carrier absorption coefficient is proportional to where is the ith QW areal carrier density. Similarly, a bulk structure of depth with a volumetric carrier density can be considered as comprising N adjacent QWs, each with areal density and normalized intensity Applying the formula yields thus, is the bulk equivalent carrier density for the QW structures. For uniform a definition of effective mode size can be taken to be for N QWs. For the structures studied, calculation of yields values ranging from 2.1 to 3.8 μm for the lowest-order mode. For six QWs with and an effective mode size of 2.7 μm, the equivalent bulk density is
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