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Luminescence study on interdiffusion in strained Si1−x Ge x /Si single quantum wells grown by molecular beam epitaxy
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10.1063/1.110725
/content/aip/journal/apl/63/12/10.1063/1.110725
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/12/10.1063/1.110725
/content/aip/journal/apl/63/12/10.1063/1.110725
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/content/aip/journal/apl/63/12/10.1063/1.110725
1993-09-20
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Luminescence study on interdiffusion in strained Si1−xGex/Si single quantum wells grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/12/10.1063/1.110725
10.1063/1.110725
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