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Formation of four new shallow emissions in Mn+ ion‐implanted GaAs grown by molecular beam epitaxy having extremely low concentration of background impurities
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10.1063/1.110660
/content/aip/journal/apl/63/13/10.1063/1.110660
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/13/10.1063/1.110660
/content/aip/journal/apl/63/13/10.1063/1.110660
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/content/aip/journal/apl/63/13/10.1063/1.110660
1993-09-27
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of four new shallow emissions in Mn+ ion‐implanted GaAs grown by molecular beam epitaxy having extremely low concentration of background impurities
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/13/10.1063/1.110660
10.1063/1.110660
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