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Defect and strain redistribution in In x Ga1−x As/GaAs multiple quantum wells studied by resonant Raman scattering
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10.1063/1.110680
/content/aip/journal/apl/63/13/10.1063/1.110680
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/13/10.1063/1.110680
/content/aip/journal/apl/63/13/10.1063/1.110680
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/content/aip/journal/apl/63/13/10.1063/1.110680
1993-09-27
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect and strain redistribution in InxGa1−xAs/GaAs multiple quantum wells studied by resonant Raman scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/13/10.1063/1.110680
10.1063/1.110680
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