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Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology
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10.1063/1.110611
/content/aip/journal/apl/63/14/10.1063/1.110611
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/14/10.1063/1.110611
/content/aip/journal/apl/63/14/10.1063/1.110611
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/content/aip/journal/apl/63/14/10.1063/1.110611
1993-10-04
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/14/10.1063/1.110611
10.1063/1.110611
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