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GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process
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10.1063/1.110615
/content/aip/journal/apl/63/14/10.1063/1.110615
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/14/10.1063/1.110615
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/content/aip/journal/apl/63/14/10.1063/1.110615
1993-10-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/14/10.1063/1.110615
10.1063/1.110615
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