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Composition dependence of band gap and type of lineup in In1−xy Ga x Al y As/InP heterostructures
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10.1063/1.110648
/content/aip/journal/apl/63/14/10.1063/1.110648
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/14/10.1063/1.110648
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/content/aip/journal/apl/63/14/10.1063/1.110648
1993-10-04
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition dependence of band gap and type of lineup in In1−x−yGaxAlyAs/InP heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/14/10.1063/1.110648
10.1063/1.110648
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