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Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry
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9.The SIMS staff of MST Foundation (private communication).
10.If one assumes that the whole incoming flux of oxygen was incorporated into the sample, the intensity of the oxygen beam flux corresponds to Torr.
11.The partial pressures of residual gases present in the MBE system were not analyzed. However the electron mobility (typically at 4.2 K) of the selectively doped single heterostructures grown during this study indicates the high quality of our MBE system.
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