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Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide
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10.1063/1.110487
/content/aip/journal/apl/63/17/10.1063/1.110487
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/17/10.1063/1.110487
/content/aip/journal/apl/63/17/10.1063/1.110487
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/content/aip/journal/apl/63/17/10.1063/1.110487
1993-10-25
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/17/10.1063/1.110487
10.1063/1.110487
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