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Carrier escape mechanisms from GaAs/Al x Ga1−x As multiple quantum wells in an electric field
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6.The peaks correspond to resonances aligning the lowest narrow well level of one pair of wells with wide well levels of the next pair through the thick 153 Å barrier separating the coupled pairs. We observe resonant tunneling through such a thick barrier because of the slow spatially indirect recombination above
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12.A decrease in the recombination time with power would also produce the same effect, but this kind of behavior is not expected at low carrier densities: See J. F. Ryan, R. A. Taylor, A. J. Turberfield, A. Maciel, J. M. Worlock, A. C. Gossard, and W. Wiegmann, Phys. Rev. Lett. 53, 1841 (1984).
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