1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of rapid thermal annealing on gate induced drain leakage in a n‐channel metal‐oxide‐semiconductor field effect transistor
Rent:
Rent this article for
USD
10.1063/1.110257
/content/aip/journal/apl/63/22/10.1063/1.110257
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/22/10.1063/1.110257
/content/aip/journal/apl/63/22/10.1063/1.110257
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/63/22/10.1063/1.110257
1993-11-29
2014-08-30
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of rapid thermal annealing on gate induced drain leakage in a n‐channel metal‐oxide‐semiconductor field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/22/10.1063/1.110257
10.1063/1.110257
SEARCH_EXPAND_ITEM