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SiO2 mask erosion and sidewall composition during CH4/H2 reactive ion etching of InGaAsP/InP
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10.1063/1.110213
/content/aip/journal/apl/63/23/10.1063/1.110213
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/23/10.1063/1.110213
/content/aip/journal/apl/63/23/10.1063/1.110213
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/content/aip/journal/apl/63/23/10.1063/1.110213
1993-12-06
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiO2 mask erosion and sidewall composition during CH4/H2 reactive ion etching of InGaAsP/InP
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/23/10.1063/1.110213
10.1063/1.110213
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