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Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon
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10.1063/1.110214
/content/aip/journal/apl/63/23/10.1063/1.110214
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/23/10.1063/1.110214
/content/aip/journal/apl/63/23/10.1063/1.110214
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/content/aip/journal/apl/63/23/10.1063/1.110214
1993-12-06
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/23/10.1063/1.110214
10.1063/1.110214
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