Identity of the light‐emitting states in porous silicon wires
1.See many recent articles on porous Si in Microcrystalline Semiconductors: Materials Science and Devices, edited by P.M. Fauchet et al. (Materials Research Society, Pittsburgh, PA, 1992), Vol. 283.
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9.Inside α band, the band edge transition has a 2.2 ms lifetime and is 26 meV below the next transition. This happens to be close to the very slow transition of 3 ms with a 20 meV energy separation detected and designated as spin-triplet transition by Ref. 4, although spin-degree of freedom is not considered in the present calculation.
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