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Room‐temperature electron mobility in strained Si/SiGe heterostructures
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10.1063/1.110045
/content/aip/journal/apl/63/3/10.1063/1.110045
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/3/10.1063/1.110045
/content/aip/journal/apl/63/3/10.1063/1.110045
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/content/aip/journal/apl/63/3/10.1063/1.110045
1993-07-19
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room‐temperature electron mobility in strained Si/SiGe heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/3/10.1063/1.110045
10.1063/1.110045
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