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Si‐SiO2 interface trap density in boron‐ and phosphorus‐implanted silicon
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10.1063/1.109953
/content/aip/journal/apl/63/5/10.1063/1.109953
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/5/10.1063/1.109953
/content/aip/journal/apl/63/5/10.1063/1.109953
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/content/aip/journal/apl/63/5/10.1063/1.109953
1993-08-02
2014-12-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si‐SiO2 interface trap density in boron‐ and phosphorus‐implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/5/10.1063/1.109953
10.1063/1.109953
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