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Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors
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10.1063/1.109900
/content/aip/journal/apl/63/6/10.1063/1.109900
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/6/10.1063/1.109900
/content/aip/journal/apl/63/6/10.1063/1.109900
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/content/aip/journal/apl/63/6/10.1063/1.109900
1993-08-09
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Segregation of Si δ doping in GaAs‐AlGaAs quantum wells and the cause of the asymmetry in the current‐voltage characteristics of intersubband infrared detectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/6/10.1063/1.109900
10.1063/1.109900
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