Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fabrication of silicon nanostructures with a scanning tunneling microscope
1.For recent reviews see, G. M. Shedd and P. E. Russell, Nanotechnology 1, 67 (1990);
1.R. Wiesendanger, Appl. Surf. Sci. 54, 271 (1992).
2.D. M. Eigler and E. K. Schweizer, Nature 344, 524 (1990).
3.J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennet, Appl. Phys. Lett. 56, 2001 (1990).
4.R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Phys. Rev. Lett. 65, 1917 (1990).
5.J. A. Dagata, J. Schneir, H. H. Harary, J. Bennett, and W. Tseng, J. Vac. Sci. Technol. B 9, 1384 (1991).
6.G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
7.E. D. Palik, V. M. Bermudez, and O. J. Glembocki, J. Electrochem. Soc. 132, 871 (1985).
8.S. R. Kasi, M. Liehr, P. A. Thiry, H. Dallaporta, and M. Offenberg, Appl. Phys. Lett. 59, 108 (1991).
9.Figure 1 shows an apparent etch depth less than the value quoted in the text. This is because the low aspect ratio of the AFM tip would not allow it to reach the bottom between the lines. The actual etch depth was measured at an edge of the pattern.
Article metrics loading...