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The process limitation for forming Ti silicided shallow junction by BF2 + implantation into thin polycrystalline Si films and subsequent Ti silicidation
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10.1063/1.109753
/content/aip/journal/apl/63/9/10.1063/1.109753
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/9/10.1063/1.109753
/content/aip/journal/apl/63/9/10.1063/1.109753
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/content/aip/journal/apl/63/9/10.1063/1.109753
1993-08-30
2014-11-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The process limitation for forming Ti silicided shallow junction by BF2+ implantation into thin polycrystalline Si films and subsequent Ti silicidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/9/10.1063/1.109753
10.1063/1.109753
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