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Demonstration of Y1Ba2Cu3O7−δ and complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate
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10.1063/1.109758
/content/aip/journal/apl/63/9/10.1063/1.109758
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/9/10.1063/1.109758
/content/aip/journal/apl/63/9/10.1063/1.109758
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/content/aip/journal/apl/63/9/10.1063/1.109758
1993-08-30
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Demonstration of Y1Ba2Cu3O7−δ and complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/9/10.1063/1.109758
10.1063/1.109758
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