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Low temperature (313 °C) silicon epitaxial growth by plasma‐enhanced chemical vapor deposition with stainless steel mesh
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10.1063/1.109787
/content/aip/journal/apl/63/9/10.1063/1.109787
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/9/10.1063/1.109787
/content/aip/journal/apl/63/9/10.1063/1.109787
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/content/aip/journal/apl/63/9/10.1063/1.109787
1993-08-30
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature (313 °C) silicon epitaxial growth by plasma‐enhanced chemical vapor deposition with stainless steel mesh
http://aip.metastore.ingenta.com/content/aip/journal/apl/63/9/10.1063/1.109787
10.1063/1.109787
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