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Determination of band gap narrowing and hole density for heavily C‐doped GaAs by photoluminescence spectroscopy
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10.1063/1.110877
/content/aip/journal/apl/64/1/10.1063/1.110877
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/1/10.1063/1.110877
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/content/aip/journal/apl/64/1/10.1063/1.110877
1994-01-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of band gap narrowing and hole density for heavily C‐doped GaAs by photoluminescence spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/1/10.1063/1.110877
10.1063/1.110877
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