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Residues, polycrystalline silicon voids, and active area damage with the polycrystalline silicon buffered local oxidation of silicon isolation process
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10.1063/1.110879
/content/aip/journal/apl/64/1/10.1063/1.110879
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/1/10.1063/1.110879
/content/aip/journal/apl/64/1/10.1063/1.110879
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/content/aip/journal/apl/64/1/10.1063/1.110879
1994-01-03
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Residues, polycrystalline silicon voids, and active area damage with the polycrystalline silicon buffered local oxidation of silicon isolation process
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/1/10.1063/1.110879
10.1063/1.110879
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