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Monolayer thickness control of In x Ga1−x As/GaAs quantum wells grown by metalorganic molecular beam epitaxy
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10.1063/1.111879
/content/aip/journal/apl/64/12/10.1063/1.111879
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/12/10.1063/1.111879
/content/aip/journal/apl/64/12/10.1063/1.111879
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/content/aip/journal/apl/64/12/10.1063/1.111879
1994-03-21
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolayer thickness control of InxGa1−xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/12/10.1063/1.111879
10.1063/1.111879
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