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Resonant tunneling between parallel, two‐dimensional electron gases: A new approach to device fabrication using in situ ion beam lithography and molecular beam epitaxy growth
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10.1063/1.111768
/content/aip/journal/apl/64/14/10.1063/1.111768
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/14/10.1063/1.111768
/content/aip/journal/apl/64/14/10.1063/1.111768
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/content/aip/journal/apl/64/14/10.1063/1.111768
1994-04-04
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resonant tunneling between parallel, two‐dimensional electron gases: A new approach to device fabrication using in situ ion beam lithography and molecular beam epitaxy growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/14/10.1063/1.111768
10.1063/1.111768
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