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Empty state and filled state image of ZnGa acceptor in GaAs studied by scanning tunneling microscopy
1.C. Kittel, Introduction to Solid State Physics (Wiley, New York, 1986), p. 206.
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5.H. W. M. Salemink (private communication).
6.We have found spherical feature in both positive and negative sample bias in Be doped GaAs, similar to donor feature. We speculate that they are the Be but did identify them with strong evidence.
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8.Since the features are from in six subsurface layers, the concentration of in each layer is estimated to be This value agrees with the expected concentration in (110) plane, which is for doping concentration of
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