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Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
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10.1063/1.111781
/content/aip/journal/apl/64/14/10.1063/1.111781
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/14/10.1063/1.111781
/content/aip/journal/apl/64/14/10.1063/1.111781
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/content/aip/journal/apl/64/14/10.1063/1.111781
1994-04-04
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/14/10.1063/1.111781
10.1063/1.111781
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