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Al x Ga1−x As‐GaAs‐In y Ga1−y As quantum well heterostructure lasers with native oxide current‐blocking windows formed on metallized devices
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10.1063/1.111660
/content/aip/journal/apl/64/16/10.1063/1.111660
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/16/10.1063/1.111660
/content/aip/journal/apl/64/16/10.1063/1.111660
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/content/aip/journal/apl/64/16/10.1063/1.111660
1994-04-18
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlxGa1−xAs‐GaAs‐InyGa1−yAs quantum well heterostructure lasers with native oxide current‐blocking windows formed on metallized devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/16/10.1063/1.111660
10.1063/1.111660
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