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Study of reactive‐ion‐etched silicon by a novel ultrashallow depth profiling technique
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10.1063/1.111661
/content/aip/journal/apl/64/16/10.1063/1.111661
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/16/10.1063/1.111661
/content/aip/journal/apl/64/16/10.1063/1.111661
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/content/aip/journal/apl/64/16/10.1063/1.111661
1994-04-18
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of reactive‐ion‐etched silicon by a novel ultrashallow depth profiling technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/16/10.1063/1.111661
10.1063/1.111661
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