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Photolithographic patterning of protective arsenic capping on molecular beam epitaxy grown Al x Ga1−x As(001)
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10.1063/1.111704
/content/aip/journal/apl/64/16/10.1063/1.111704
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/16/10.1063/1.111704
/content/aip/journal/apl/64/16/10.1063/1.111704
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/content/aip/journal/apl/64/16/10.1063/1.111704
1994-04-18
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photolithographic patterning of protective arsenic capping on molecular beam epitaxy grown AlxGa1−xAs(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/16/10.1063/1.111704
10.1063/1.111704
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