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Low‐field hole mobility of strained Si on (100) Si1−x Ge x substrate
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10.1063/1.111558
/content/aip/journal/apl/64/19/10.1063/1.111558
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/19/10.1063/1.111558
/content/aip/journal/apl/64/19/10.1063/1.111558
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/content/aip/journal/apl/64/19/10.1063/1.111558
1994-05-09
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low‐field hole mobility of strained Si on (100) Si1−xGex substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/19/10.1063/1.111558
10.1063/1.111558
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