No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Field effect in weakly compensated Si under condition of impurity conduction
1.S. Manzini and A. Modelli, J. Appl. Phys. 65, 2361 (1989).
2.A. S. Vedeneev, A. G. Gayvoronskii, and A. G. Zhdan, Prib. Tekh. Eksp. 2, 246 (1992).
3.J. A. Chroboczek, F. H. Pollak, and H. F. Staunton, Philos. Mag. B 50, 113 (1984).
4.B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, New York, 1984).
5.Yu. Ya. Tkach and E. V. Chensky, Zh. Eksp. Teor. Fiz. 102, 1683 (1992).
6.N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979).
7.T. Ando, A. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month