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2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
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10.1063/1.111603
/content/aip/journal/apl/64/19/10.1063/1.111603
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/19/10.1063/1.111603
/content/aip/journal/apl/64/19/10.1063/1.111603
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/content/aip/journal/apl/64/19/10.1063/1.111603
1994-05-09
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/19/10.1063/1.111603
10.1063/1.111603
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