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Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface
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10.1063/1.111492
/content/aip/journal/apl/64/20/10.1063/1.111492
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/20/10.1063/1.111492
/content/aip/journal/apl/64/20/10.1063/1.111492
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/content/aip/journal/apl/64/20/10.1063/1.111492
1994-05-16
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/20/10.1063/1.111492
10.1063/1.111492
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