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Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
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10.1063/1.111977
/content/aip/journal/apl/64/21/10.1063/1.111977
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/21/10.1063/1.111977
/content/aip/journal/apl/64/21/10.1063/1.111977
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/content/aip/journal/apl/64/21/10.1063/1.111977
1994-05-23
2015-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/64/21/10.1063/1.111977
10.1063/1.111977
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